Photoluminescence and reflectance mapper instrument

Tampere University is publishing direct award notice for 'Photoluminescence and reflectance mapper instrument'. Hereinafter also as 'PL mapper'.

BACKGROUND INFORMATION To advance research in semiconductor and optoelectronics research field, Tampere University is in the process of expanding its laboratory infrastructure with funding from the Research Council of Finland. To do this, university will acquire a new photoluminescence and reflectance mapping tool. (Hereinafter also ’PL mapper’). This new infrastructure will replace the existing old PL-mapper system and expand its measurement capabilities to longer wavelengths, which has not been possible with the existing instrumentation. The new infrastructure will help in development of new optoelectronic devices and semiconductor chips. NEED PL mapper tool to Photonic laboratory of Tampere University. Technical specifications/requirements: • Measurement capabilities: o Single point photoluminescence (PL) measurements on 200 mm x 200 mm wafers o PL characteristics mapping over 200 mm x 200 mm o Single point reflectance measurements (measurement angle = 0 degrees) on 200 mm x 200 mm wafers o Reflectance mapping over 200 mm x 200 mm o Wafer curvature measurement • Measurement wavelength range for PL measurements: from 550 nm to at least up to 2100 nm (2400 nm preferred, but not mandatory) in a single measurement “scan” • Capability of analysing the peak wavelength, integrated intensity, peak intensity and full width at half maximum (FWHM) from PL measurements • Measurement wavelength range for reflectance measurements: from 400 nm to at least up to 2100 nm (2400 nm preferred) in a single “scan” measurement • Capability of analysing the typical reflectance related parameters of o thin films (thickness) o distributed Bragg reflectors (stop band width, center wavelength) o VCSEL:s and optical cavities (the cavity dip position) • Capability of analysing the radius of curvature of the wafers • At least four (4) excitation light source wavelengths for PL measurements: o Excitation source 1: between 450 nm and 532 nm o Excitation source 2: 785 nm o Excitation source 3: 980 nm o Excitation source 4: 1050–1100 nm. o Fifth (or sixth) excitation source option, 1200–1500 nm or shorter than 410 nm would also be highly preferred (not mandatory) • Adequate long pass filters for each excitation wavelength • User adjustable spot size for the excitation lasers • User adjustable excitation power for the lasers • Excitation intensity measurement • Broadband light source for reflectance measurements covering and producing enough intensity for reliable reflectance measurements at least in the required measurement wavelength range • Wavelength resolution of the measurements: o For shorter wavelengths (<1100 nm) less than 1 nm o For longer wavelengths (>1100 nm) less than 3 nm • Wafer height adjustment • Adequate safety interlocks • Manual wafer handling (no automation for sample exchange between measurements) MARKET ANALYSIS AND CONCLUSION FOR DIRECT AWARD Meeting all the specified requisites and the ability to provide all required properties is mandatory of been selected in this procurement process. In the market survey phase ten possible suppliers were recognized. The main key requirements are wide wavelength range of PL and reflectance measurements and mapping of compound semiconductor samples and wafers, with at least four preset excitation laser wavelengths in a single tool and with wafer curvature measurement. These are the key decisive elements YSystems’s (YSystems Kokusai Co., Ltd.) tool fulfil. Most of the tools on the market fulfil only part of the required technical specifications or are too bulky/automated and designed for large sample throughput, which sets their price too high. Due to the aforementioned high technical requirements, only the specific supplier can be considered. Reasonable alternatives or substitute solutions do not exist, at least not in the similar price level, in the required delivery time, and in not-a-prototype-category. The absence of competition is not due to an artificial narrowing of purchase conditions. The contracting authority has the right to set a quality level based on its own needs which products or services must implement.