MBE (Molecular beam epitaxy) system
Tampere University Foundation sr · Pirkanmaa
Perustiedot
- Hankkija
- Tampere University Foundation sr, Y-tunnus 2844561-8
- Toteutuspaikka
- Pirkanmaa (FI19B)
- Hankintalaji
- Tavarahankinta
- Menettely
- Avoin menettely, EU-hankinta
- Ilmoituksen tyyppi
- Jälki-ilmoitus
- Sopimusten kokonaisarvo
- 1 699 900 € (alv 0 %)
- Pääasiallinen CPV
- 38000000 Laboratoriolaitteet, optiset ja tarkkuuslaitteet (lukuun ottamatta silmälaseja)
- Julkaistu
- 28.1.2025
Hankinnan tulos
| Voittaja | Sopimusarvo | Tarjouksia | Päätös |
|---|---|---|---|
| Dr. Eberl MBE-Komponenten GmbH | 1 699 900 € | ei ilmoitettu |
Voittajista näytetään nimi ja Y-tunnus. ”Ei ilmoitettu” tarkoittaa, ettei ilmoituksessa ole tätä tietoa erälle tai sopimukselle.
Ilmoituksen teksti
Alkuperäinen teksti Hilmasta, muuttamattomanaTampere University Foundation sr is inviting tenders for
'III-V MBE (Molecular beam epitaxy) system', hereinafter 'MBE system'.
This call is funded directly by Business Finland - and indirectly by EU RRF Regulation (EU 2021/241 Recovery and Resilience Facility) .
Lisätiedot
Tampere University’s Engineering and Natural Sciences develops various photonics and electronics solutions based on III-V compound semiconductor materials. These targets are served by the molecular beam epitaxy (MBE) and Micro and nanofabrication infrastructures having capability to fabricate for example semiconductor chips and interface them to applications.
Purpose of the tender is to renew and strengthen our capability to fabricate state-of-the-art III-V compound semiconductor materials and devices by molecular beam epitaxy technique within the EU Resilience and Recovery Facility (RRF) flagship initiative.
Specifically, the new MBE system will replace some of the outdated infrastructure. It should enable state-of-the-art fabrication processes of As-N-P-Sb -based semiconductor multilayer structures used for photonics, microelectronics and quantum technology.
===GENERAL SYSTEM SPESIFICATIONS===
A state-of-the-art molecular beam epitaxy system capable of growing III-V arsenides, phosphides, dilute nitrides and dilute antimonides on four (4) inches substrate wafers.
Customer provides the following facilities:
cooling water, dry nitrogen, liquid nitrogen, compressed air, and electricity (backed up with a UPS system).
===BUDGET===
Tenderers are asked to notice in pricing that maximum price of contract to be signed can not exceed 1,7 M€ (excl. VAT), including:
+ MBE system itself,
+ available (& in contract phase chosen) options,
+ delivery/shipping, installation, warranty and user training.
Therefore it is highly advantageous to offer advanced and comprehensive setup (gaining high points in tenders comparison) that is fitting into 1,7 M€ budget.
Only those options that are included in the maximum budget will be awarded with extra points in tenders comparison.
Furthermore, there is no need for tenderers to quote options that would not fit in the maximum budget.
===PUBLISHING (AND RE-PUBLISHING)===
Originally 30th of August 2024. Re-published in CORRECTED format 16th of September 2024.
Posed questions and the anwers to questions before re-publishing are available in call attachment, titled 'Q and A'.
Hankinnan vaiheet
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–Hankintailmoitus
Aiempi versio. Sen tiedot eivät ole Urakkahaussa.
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Ostajan virheen korjaaminen.
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Jälki-ilmoitustämä ilmoitus
Voittaja: Dr. Eberl MBE-Komponenten GmbH.